On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Si

Abstract The rapid advent of the piezoelectric microelectromechanical systems (PiezoMEMS) field has created a tremendous demand for low hysteretic thin films on Si. In this work, we present integration epitaxial Pb(Mg 0.33 Nb 0.67 )O 3 -PbTiO (PMN-PT) with Si to enable device fabrication using state art methods. With optimized buffer layers and electronic contacts, high-quality PMN-PT are integrated Si, which is significant stride towards employing film PiezoMEMS devices. It found that processing necessary SrTiO layer crucial achieve growth phase-pure perovskite Furthermore, propose engineering contact PMN-PT-on-Si capacitors obtain polarization displacement responses.